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BTS50080-1TMC smart high-side power switch profet? one channel datasheet, rev. 1.0, aug. 2008 automotive power
datasheet 2 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC table of contents 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram and terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 pin assignment BTS50080-1TMC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.3 output inductive clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.3.1 maximum load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.1 overload protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.2 short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.3 reverse polarity protection - reversav e? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4 overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.5 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.6 loss of v bb protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.7 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 7.1 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table of contents
pg-to220-7-4 type package marking BTS50080-1TMC pg-to220-7-4 s50080c datasheet 3 rev. 1.0, 2008-08-22 smart high-side power switch profet? one channel BTS50080-1TMC 1overview features ? enhanced specification of load current sense ? reversave? ? very low standby current ? current controlled input pin ? improved electromagnetic compatibility (emc) ? fast demagnetization of inductive loads ? stable behavior at under-voltage ? green product (rohs compliant) ? aec qualified the BTS50080-1TMC is a one channel high-side power switch in pg-to220-7-4 package providing embedded protective functions. the power transistor is built by a n-channel vertical power mosfet with charge pump. the design is based on smart sipmos chip on chip technology. the BTS50080-1TMC has a current controlled input and offe rs a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/ or short circuit shutdown. operating voltage v bb(on) 5.5..38v minimum overvoltage protection v on(cl) 39 v maximum on-state resistance at 150c r ds(on) 16 m ? nominal load current i l(nom) 9.5 a load current (iso) i l(iso) 37.5 a minimum current limitation i l6(sc) 90 a maximum stand-by current for whole device with load at t j = 25 c i bb(off) 6a
smart high-side power switch BTS50080-1TMC overview datasheet 4 rev. 1.0, 2008-08-22 protective functions ? reversave?, channel switches on in case of reverse polarity ? reverse battery protection without external components ? short circuit protection with latch ? overload protection ? multi-step current limitation ? thermal shutdown with restart ? overvoltage protection (including load dump) ? loss of ground protection ? loss of v bb protection (with external diode for charged inductive loads) ? electrostatic discha rge protection (esd) diagnostic functions ? proportional load current sense (with defined fault sign al in case of overload operation, overtemperature shutdown and/or short circuit shutdown) ? open load detection in on-state by load current sense applications ? c compatible high-side power switch with diagnostic feedback for 12 v grounded loads ? all types of resistive, in ductive and capacitive loads ? most suitable for loads with high inrush currents, so as lamps ? replaces electromechanical relays, fuses and discrete circuits
datasheet 5 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC block diagram and terms 2 block diagram and terms 2.1 block diagram figure 1 block diagram 2.2 terms following figure shows all term s used in this data sheet. figure 2 terms logic ic base chip v bb is out in load es d r is v is v in i in i l ov er v iew . em f t dr iver logic gate control & charge pump load current sense over tem per ature clamp for inductive load current limitation forward voltage drop detection voltage sensor i is r bb ter m s . em f v in out v is i is v bb i l v out i bb in vbb is i in v bin v bis v on r in r is BTS50080-1TMC
smart high-side power switch BTS50080-1TMC pin configuration datasheet 6 rev. 1.0, 2008-08-22 3 pin configuration 3.1 pin assignment BTS50080-1TMC figure 3 pin configuration 3.2 pin definitions and functions pin symbol function 1, 2 out output; output to the load; pin 1, 2, 6 and 7 must be externally shorted. 1) 1) not shorting all outputs will considerably increase the on-state resistance, reduce the peak cu rrent capability, the clamping capability and decrease the current sense accuracy. 3in input; activates the power switch if shorted to ground. 4v bb supply voltage; positive power supply voltage; ta b and pin 4 are internally shorted. 5is sense output; diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see table 1 ?truth table? on page 21 ). 6, 7 out output; output to the load; pin 1, 2, 6 and 7 must be externally shorted. 1) tab v bb supply voltage; positive power supply voltage; ta b and pin 4 are internally shorted. to220-7 . emf 1 v bb out tab 2 3 4 5 6 7 out out out in is v bb
datasheet 7 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC general product characteristics 4 general product characteristics 4.1 absolute maximum ratings note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. absolute maximum ratings 1) t j = 25c (unless otherwise specified) 1) not subject to production test, specified by design. pos. parameter symbol limit values unit conditions min. max. supply voltages 4.1.1 supply voltage v bb -16 38 v ? 4.1.2 supply voltage for sh ort circuit protection (single pulse) 2) 2) short circuit is defined as a combination of remaining resistances and inductances. see figure 13 . v bb(sc) 030v? 4.1.3 supply voltage for load dump protection 3) 3) load dump is specified in iso 7637, r i is the internal resistance of the load dump pulse generator. v bb(ld) ?45v r i = 2 ? , r l = 1 ? logic pins 4.1.4 voltage at input pin v bin -16 63 v ? 4.1.5 current through input pin i in -120 15 ma ? 4.1.6 voltage at current sense pin v bis -16 63 v ? 4.1.7 current through sense pin i is -120 15 ma ? 4.1.8 input voltage slew rate 4) 4) slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the inpu t path. a series resistor r in in the input path is also required for reverse operation at v bb -16v. see also figure 14 . d v bin /d t -20 20 v/s ? power stages 4.1.9 load current 5) 5) current limitation is a protec tion feature. operation in curre nt limitation is considered as ?outside? normal operating range . protection features are not designed for continuous repetitive operation. i l - i lx(sc) a? 4.1.10 maximum energy dissipation per channel (single pulse) e as -0.4j v bb = 12 v, i l(0) = 20 a, t j(0) = 150c temperatures 4.1.11 junction temperature t j -40 150 c ? 4.1.12 storage temperature t stg -55 150 c ? esd susceptibility 4.1.13 esd susceptibility hbm v esd -3 3 kv according to eia/jesd 22-a 114b
smart high-side power switch BTS50080-1TMC general product characteristics datasheet 8 rev. 1.0, 2008-08-22 note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 4.2 thermal resistance pos. parameter symbol limit values unit conditions min. typ. max. 4.2.1 junction to case 1) 1) not subject to production test, specified by design. r thjc ?0.70.8k/w? 4.2.2 junction to ambient 1) free air device on pcb 2) 2) device mounted on pcb (50 mm x 50 mm x 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. r thja - - 60 33 - - k/w ?
datasheet 9 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC power stages 5 power stages the power stage is built by a n-channel vertic al power mosfet (dmos) with charge pump. 5.1 input circuit figure 4 shows the input circuit of the bts 50080-1tmc. the current source to v bb ensures that the device switches off in case of open input pin. the zener diode protects the input ci rcuit against esd pulses. figure 4 input circuit a high signal at the required external small signal transisto r pulls the input pin to ground. a logic supply current i in is flowing and the power dmos switches on with a dedicated slope, which is optimized in terms of emc emission. figure 5 switching a load (resistive) 5.2 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage as well as the junction temperature t j . figure 6 shows these dependencies for the typical on-state resi stance. the voltage drop in reverse polarity mode is described in section 6.3 . in r bb i v bb i nput. emf v z,in v in i in v bin v out t switchon.emf t i in 10% 25% 50% 90% t on t off (d v/ d t ) on (d v/ d t ) off
smart high-side power switch BTS50080-1TMC power stages datasheet 10 rev. 1.0, 2008-08-22 figure 6 typical on-state resistance figure 7 typical output voltage drop limitation 5.3 output inductive clamp when switching off inductive loads, the output voltage v out drops below ground potential due to the involved inductance ( -d i l /d t =- v l /l ; - v out ? - v l ). v bb = 12 v t j = 25c
datasheet 11 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC power stages figure 8 output clamp to prevent destruction of th e device, there is a voltage clamp mechanis m implemented that keeps the voltage drop across the device at a certain level ( v on(cl) ). see figure 8 and figure 9 for details. the ma ximum allowed load inductance is limited. figure 9 switching an inductance 5.3.1 maximum load inductance while de-energizing inductive loads, energy has to be dissipated in the BTS50080-1TMC. this energy can be calculated via the following equation: in the event of de-energizing very low ohmic inductances ( r l 0) the following, simplified equation can be used: the energy, which is converted into heat, is limited by the thermal design of the component. for given starting currents the maximum allowed indu ctance is therefore limited. see figure 10 for the maximum allowed inductance at v bb =12v. out put clam p . em f out v bb vbb l , r l v out i l v on v out i nduct iveload. emf t i l t v out(cl) v bb on off v on(cl) ev on cl () v bb v on cl () ? r l ------------------ ------------------ ln ? 1 r l i l ? v on(cl) v bb ? ------------------ ---------------- - + ?? ?? i l + l r l ----- - ?? = e 1 2 -- - li l 2 v on(cl) v on(cl) v bb ? ------------------ ---------------- - ? =
smart high-side power switch BTS50080-1TMC power stages datasheet 12 rev. 1.0, 2008-08-22 figure 10 maximum load inductance for single pulse, t j(0) 150c. t j(o) 150c v bb = 12 v
datasheet 13 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC power stages 5.4 electrical characteristics v bb = 12 v, t j = -40 ... 150 c (unless otherwise specified) typical values are given at v bb = 12 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. general 5.4.1 operating voltage 1) v bb(on) 5.5 - 38 v v in = 0 v 5.4.2 undervoltage shutdown 2) v bin(u) -2.53.5v t j = 25 c 5.4.3 undervoltage restart of charge pump v bb(ucp) -45.5v? 5.4.4 operating current i in -1.42.2ma? 5.4.5 stand-by current t j = -40 ... 25 c t j 120 c 2) t j = 150 c i bb(off) - - - 3 3 6 6 6 14 a i in = 0 a input characteristics 5.4.6 input current for turn-on i in(on) -1.42.2ma v bin v bb(ucp) - v in 5.4.7 input current for turn-off i in(off) --30a? output characteristics 5.4.8 on-state resistance t j =25c t j =150c v bb =5.5v, t j =25c v bb =5.5v, t j =150c r ds(on) - - - - 7 13 9.5 17 - 16 - 22 m ? v in =0v, i l =10a, (tab to pin 1, 2, 6 and 7) 5.4.9 output voltage drop limitation at small load currents v on(nl) -3060mv? 5.4.10 nominal load current (tab to pin 1, 2, 6 and 7) 3) 4) i l(nom) 9.5 12 - a t a = 85 c, v on 0.5 v, t j 150 c iso load current (tab to pin 1, 2, 6 and 7) 4) i l(iso) 37.5 48 - a t c =85c, v on 0.5 v, t j 150 c 5.4.11 output clamp v on(cl) 39 42 - v i l =40ma, t j =25c 5.4.12 inverse current output voltage drop 2) 5) (tab to pin 1, 2, 6 and 7) t j = 25 c t j = 150 c - v on(inv) - - 700 300 - - mv i l =-10a, r is =1k ? timings 5.4.13 turn-on time to 90% v out t on -300550s r l = 2.2 ?
smart high-side power switch BTS50080-1TMC power stages datasheet 14 rev. 1.0, 2008-08-22 note: characteristics show the deviat ion of parameter at the given supply voltage and junction temperature. typical values show the typical param eters expected from manufacturing. 5.4.14 turn-off time to 10% v out t off -300600s r l = 2.2 ? 5.4.15 turn-on delay after inverse operation 2) t d(inv) -1-ms v bb > v out , v in(inv) = v in(fwd) =0v 5.4.16 slew rate on 25% to 50% v out (d v / d t ) on - 0.2 0.35 v/s r l = 2.2 ? 5.4.17 slew rate off 50% to 25% v out -(d v /d t ) off - 0.2 0.45 v/s r l = 2.2 ? 1) please mind the limitations of th e embedded protection functions. see chapter 4.1 and chapter 6 for details. 2) not subject to production test, specified by design 3) device mounted on pcb (50 mm x 50 mm x 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. 4) not subject to production test, parameters are calculated from r ds(on) and r th 5) during inverse operation ( i l <0a, v bin > 0 v), a current through the intrinsic body diode causing a voltage drop of v on(inv) results in a delayed switch on with a time delay t d(inv) after the transition from inverse to forward operation. a sense current i is(fault) can be provided by the pin is until st andard forward operation is reached. v bb = 12 v, t j = -40 ... 150 c (unless otherwise specified) typical values are given at v bb = 12 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max.
datasheet 15 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC protection functions 6 protection functions the device provides embedded protecti ve functions. integrat ed protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are neither designed for continuous nor repetitive operation. 6.1 overload protection the load current i l is limited by the device itself in case of over load or short circuit to ground. there are multiple steps of current limitation i lx(sc) which are selected automatically depending on the voltage drop v on across the power dmos. please note that the voltage at the out pin is v bb - v on . figure 11 shows the dependency for a typical device. figure 11 typical current limitation depending on the severity of the shor t condition as well as on the battery vo ltage the resulting voltage drop across the device varies. whenever the resulting voltage drop v on exceeds the short circuit detection threshold v on(sc) , the device will switch off immediately and latch until being reset via the input. the v on(sc) detection functionality is activated, when v bin > 10 v typ. and the blanking time t d(sc1) expired after switch on. in the event that either the short circuit detection via v on(sc) is not activated or that th e on chip temperature sensor senses overtemperature be fore the blanking time t d(sc1) expired, the device switches off resulting from over- temperature detection. after cooling down with thermal hysteresis, the device switches on again. the device will react as during normal switch on triggered by the input signal. please refer to figure 12 and figure 19 for details. 0 25 50 75 100 125 150 0 10203040 v on i l(sc) v a v on(sc) typ. t j = 25c
smart high-side power switch BTS50080-1TMC protection functions datasheet 16 rev. 1.0, 2008-08-22 figure 12 overload behavior 6.2 short circuit impedance the capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. figure 13 short circuit v_on_detect .emf t v on t i l i in t t m i lx(sc) t d(sc1) v onx > v on(sc) j i l t thermal hysteresis t i in over_temp.emf t overtemperature detection v on(sc) detection short_circuit .emf v bb is in profet out v bb 10m ? 5uh r sc l sc lo ad short circuit ?
datasheet 17 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC protection functions 6.3 reverse polarity protection - reversave? the device can not block a current flow in reverse polarity condition. in order to minimize power dissipation, the device offers reversave? fu nctionality. in reverse pola rity condition the channel will be switched on provided a sufficient gate to source voltage is generated v gs v rbb . please refer to figure 14 for details. figure 14 reverse battery protection additional power is dissipated by the integrated r bb resistor. use following formula for estimation of overall power dissipation p diss(rev) in reverse polarity mode. for reverse battery voltages up to v bb < 16 v the pin in or the pin is should be low ohmic connected to signal ground. this can be achieved e.g. by using a small signal di ode d in parallel to the input switch or by using a small signal mosfet driver. for reverse battery voltages higher then v bb = 16 v an additional resistor r in is recommended. the overall current through r bb should not be above 80 ma. note: no protection mechanism is active during reverse polarity. the ic logic is not functional. reverse.emf in - i l load r bb v bb r in logic is r is - v bb - i in power ground signal ground - i is i rbb d p diss(rev) r on(rev) i l 2 ? r bb i rbb 2 ? + 1 r in -------- - 1 r is ------- - + 0.08 a v bb 12 v ? ----------------- -------------- =
smart high-side power switch BTS50080-1TMC protection functions datasheet 18 rev. 1.0, 2008-08-22 6.4 overvoltage protection beside the output clamp for t he power stage as described in section 5.3 there is a clamp mechanism implemented for all logic pins. see figure 15 for details. figure 15 overvoltage protection 6.5 loss of ground protection in case of complete loss of the devi ce ground connections the BTS50080-1TMC securely changes to or remains in off state. 6.6 loss of v bb protection in case of complete loss of v bb the BTS50080-1TMC remains in off state. in case of loss of v bb connection with charged induct ive loads a current path with lo ad current capability has to be provided, to demagnetize the charged inductances. it is recommended to use a diode, a z-diode, or a varistor ( v zl + v d < 30 v or v zb + v d < 16 v if r in = 0). for higher clamp voltages currents through in and is have to be limited to -120 ma. please refer to figure 16 for details. figure 16 loss of v bb overvolt age . emf in r bb v bb logic v z,is v z,in is out in r bb v bb logic is v bb r is r in v d v zl inductive load vbb_disconnect_a .emf in v bb lo g ic is v bb r is r in inductive load v d v zb vbb_disconnect _b. emf r bb
datasheet 19 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC protection functions 6.7 electrical characteristics v bb = 12 v, t j = -40 ... 150 c (unless otherwise specified) typical values are given at v bb = 12 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. overload protection 6.7.1 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c 1) not subject to production test, specified by design i l6(sc) - - 90 140 130 120 170 - - a v on = 6 v, (tab to pin 1, 2, 6 and 7) 6.7.2 load current limitation 2) t j = -40 c t j = +25 c t j = +150 c i l12(sc) - - 55 105 95 85 130 - - a v on = 12 v, t m = 170 s, (tab to pin 1, 2, 6 and 7) 6.7.3 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c i l18(sc) - - 45 75 70 65 100 - - a v on = 18 v, (tab to pin 1, 2, 6 and 7) 6.7.4 load current limitation 2) t j = -40 c t j = +25 c t j = +150 c i l24(sc) - - 28 47 46 45 70 - - a v on = 24 v, t m = 170 s, (tab to pin 1, 2, 6 and 7) 6.7.5 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c i l36(sc) - - 15 27 27 27 40 - - a v on = 36 v, (tab to pin 1, 2, 6 and 7) 6.7.6 short circuit shutdown detection voltage 1) v on(sc) 2.5 3.5 4.5 v v bin > 10 v typ., t j = 25 c 6.7.7 short circuit shutdown delay after input current pos. slope 3) t d(sc1) 350 650 1200 s v on > v on(sc) 6.7.8 thermal shut down temperature t j(sc) 150 175 1) -c - 6.7.9 thermal hysteresis 1) ? t j -10-k- reverse polarity 6.7.10 on-state resist ance in case of reverse polarity v bb =-8v, t j =25 c 1) v bb =-8v, t j =150 c 1) v bb =-12v, t j =25 c v bb =-12v, t j =150 c r on(rev) - - - - 8.5 13 8 13 - 18 - 19 m ? v in = 0 v, i l = -10 a, r is = 1 k ?, (pin 1, 2, 6 and 7 to tab) 6.7.11 integrated resistor in v bb line r bb -100150 ? t j = 25 c overvoltage 6.7.12 over-voltage protection v z v i bb = 15 ma input pin v z,in 63 67 - v sense pin v z,is 63 67 - v
smart high-side power switch BTS50080-1TMC protection functions datasheet 20 rev. 1.0, 2008-08-22 2) short circuit current limit for max. duration of t d(sc1) , prior to shutdown, see also figure 12 . 3) min. value valid only if input ?off-signal? time exceeds 30 s
datasheet 21 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC diagnosis 7 diagnosis for diagnosis purpose, the BTS50080-1TMC provides an enhanced sense signal at the pin is. the pin is provides during normal operation a sense current, which is proportional to the load current as long as v bis > 5 v. the ratio of the outp ut current is defined as k ilis = i l / i is . during switch-on no current is provided, until the forward voltage drops below v on < 1 v typ. the output sense current is limited to i is(lim) . the pin is provides in case of any fa ult conditions a defined fault current i is(fault) as long as v bis >8v . fault conditions are overcurrent ( v on > 1 v typ.), current limit or overtemperature switch off. the pin is provides no current during open load in on and de-energisation of inductive loads. figure 17 block diagram: diagnosis the accuracy of the provided current sense ratio ( k ilis = i l / i is ) depends on the load current. please refer to figure 18 for details. a typical resistor r is of 1 k ? is recommended. sense. emf r bb v is v b, i s i is(fault) v bb r is i is is v z,is table 1 truth table parameter input current level output level current sense i is normal operation l 1) h 1) l h 0 ( i is(ll) ) nominal overload l h l h 0 ( i is(ll) ) i is(fault) short circuit to gnd l h l l 0 ( i is(ll) ) i is(fault) overtemperature l h l l 0 ( i is(ll) ) i is(fault) short circuit to v bb l h h h 0 ( i is(ll) ) < nominal 2) open load l h z 1) h 0 ( i is(ll) ) 0 ( i is(lh) ) 1) h = ?high? level, l = ?low? level, z = high impedance, potential depends on external circuit 2) low ohmic short to v bb may reduce the output current i l and therefore also the sense current i is .
smart high-side power switch BTS50080-1TMC diagnosis datasheet 22 rev. 1.0, 2008-08-22 figure 18 current sense ratio k ilis 1) details about timings betw een the diagnosis signal i is , the forward voltage drop v on and the load current i l in on- state can be found in figure 19 . note: during operation at low load current and at activate d forward voltage drop limitat ion the ?two level control? of v on(nl) can cause a sense current ripple synchronous to the ?two level control? of v on(nl) . the ripple frequency increases at reduced load currents. figure 19 timing of diagnosis signal in on-state 1) the curves show the behavior based on characterization dat a. the marked points are guaranteed in this datasheet in section 7.1 (position 7.1.1 ). switchon.emf v on i in t v on <1v typ. i l1 i l2 i is1 i is2 t son(is) t slc(is) i l i is 0.9* i is1 i i s(f ault ) v on >1v typ. i i s(lim) i is(ll) t t t i in v on t v on >v on(sc) over-temperature i lx(sc) t delay(fault) i l i is i is(fault) t t t i l v on <1v typ. i i s(f ault ) short normal operation
datasheet 23 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC diagnosis 7.1 electrical characteristics v bb = 12 v, t j = -40 ... 150 c (unless otherwise specified) typical values are given at v bb = 12 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. load current sense 7.1.1 current sense ratio, static on- condition k ilis - 12.5 - k v in = 0 v, i is < i is(lim) i l = 35 a i l = 10 a i l = 2.5 a i l = 0.5 a i l =0.25a 11 10.5 10 7 5 12.6 12.6 12.5 14.5 20 14 14.3 17 26 66 i in = 0 (e.g. during de energizing of inductive loads) 1) 1) not subject to production test, specified by design disabled - - 7.1.2 sense saturation current 1) i is(lim) 4.067.5ma v on < 1 v, typ. 7.1.3 sense current under fault conditions i is(fault) 4.0 5.2 7.5 ma v on > 1 v, typ. 7.1.4 current sense leakage current i is(ll) ?0.10.5a i in = 0 7.1.5 current sense offset current i is(lh) ?0.11a v in = 0, i l 0 7.1.6 current sense settling time to 90% i is_stat. 1) t son(is) ?250500s i l =0 20a 7.1.7 current sense settling time to 90% i is_stat. 1) t slc(is) ?50100s i l =10 20a 7.1.8 fault-sense signal delay after input current positive slope t delay(fault) 350 650 1200 s v on > 1 v, typ.
smart high-side power switch BTS50080-1TMC package outlines datasheet 24 rev. 1.0, 2008-08-22 8 package outlines figure 20 pg-to220-7-4 green product to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). a b a 0.25 m 0.1 typical ?.2 10 8.5 1) 7.55 1) (13.85) ?.2 9.25 ?.3 1 0...0.15 7 x 0.6 ?.1 ?.1 1.27 4.4 b 0.5 ? .1 ?.3 2.1 3.6 ?.3 0.05 1) 0.1 metal surface min. x = 7.25, y = 6.9 2.4 1.27 all metal surfaces tin plated, except area of cut. 0...0.3 b 6 x 8?max. you can find all of our packages, so rts of packing and others in our infineon internet page ?packages?: http://www.infineon.com/packages . dimensions in mm
datasheet 25 rev. 1.0, 2008-08-22 smart high-side power switch BTS50080-1TMC revision history 9 revision history version date changes datasheet rev. 1.0 2008-08-22 initial version of datasheet
edition 2008-08-22 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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